Effects of sub-gate bias on the operation of Schottky-barrier SOI MOSFETs having nano-scale channel

被引：6

作者：

Lin, HC ^{[1
]}

Wang, MF ^{[1
]}

Hou, FJ ^{[1
]}

Liu, JT ^{[1
]}

Li, YM ^{[1
]}

机构：

[1] Natl Nano Device Labs, Hsinchu, Taiwan

来源：

PROCEEDINGS OF THE 2002 2ND IEEE CONFERENCE ON NANOTECHNOLOGY | 2002年

关键词：

D O I：

10.1109/NANO.2002.1032226

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The characteristics of a novel nano-scale silicon-on-insulator (SOI) device featuring silicide Schottky source/drain and field-induced S/D extensions induced by a sub-gate were investigated. The new device exhibits unique and high-performance bi-channel operation capability. In this work, particular attention was paid to the effects of sub-gate bias on the device operation. It is shown that the applied sub-gate voltage not only increases the on-state current, but also effectively suppresses the off-state leakage. Extremely high on/off current ratio (> 10(9)) has thus been obtained. Dependences of sub-gate bias on sub-threshold swing and threshold-voltage roll-off characteristics were also explored.

引用

页码：205 / 208

页数：4

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