Structure formation upon reactive direct current magnetron sputtering of transition metal oxide films

被引：65

作者：

Ngaruiya, JM

Kappertz, O

Mohamed, SH

Wuttig, M ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, Inst Phys 1, D-52056 Aachen, Germany

[2] Jomo Kenyatta Univ Agr & Technol, Nairobi, Kenya

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 05期

关键词：

D O I：

10.1063/1.1777412

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A comparative study of reactive direct current magnetron sputtering for different transition metal oxides reveals crystalline films at room temperature for group 4 and amorphous films for groups 5 and 6. This observation cannot be explained by the known growth laws and is attributed to the impact of energetic particles, originating from the oxidized target, on the growing film. This scenario is supported by measured target characteristics, the evolution of deposition stress of the films, and the observed backsputtering. (C) 2004 American Institute of Physics.

引用

页码：748 / 750

页数：3

共 26 条

[1] PLASMA DIAGNOSTICS AND ENERGY TRANSPORT OF A DC DISCHARGE USED FOR SPUTTERING [J].