Chemical and electronic surface structure of 20%-efficient Cu(In,Ga)Se2 thin film solar cell absorbers

被引：56

作者：

Baer, M. ^{[1
,2
]}

Repins, I. ^{[3
]}

Contreras, M. A. ^{[3
]}

Weinhardt, L. ^{[4
]}

Noufi, R. ^{[3
]}

Heske, C. ^{[1
]}

机构：

[1] Univ Nevada, Dept Chem, Las Vegas, NV 89154 USA

[2] Helmholtz Zentrum Berlin Mat & Energie, D-14109 Berlin, Germany

[3] Natl Renewable Energy Lab, Golden, CO 80401 USA

[4] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 05期

关键词：

conduction bands; copper compounds; energy gap; Fermi level; indium compounds; photoelectron spectra; semiconductor thin films; solar cells; surface structure; ternary semiconductors; thin film devices; BAND ALIGNMENT; HETEROJUNCTION; CHALCOPYRITE; EFFICIENCY; INTERFACE; CUINSE2;

D O I：

10.1063/1.3194153

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The chemical and electronic surface structure of 20%-efficient Cu(In,Ga)Se-2 thin film solar cell absorbers was investigated as a function of deposition process termination (i.e., ending the growth process in absence of either Ga or In). In addition to the expected In (Ga) enrichment, direct and inverse photoemission reveal a decreased Cu surface content and a larger surface band gap for the "In-terminated" absorber.

引用

页数：3

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