Electronic transport of molecular systems

被引：164

作者：

Chen, J

Reed, MA ^{[1
]}

机构：

[1] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA

[2] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA

[3] Yale Univ, Dept Phys, New Haven, CT 06520 USA

来源：

CHEMICAL PHYSICS | 2002年 / 281卷 / 2-3期

关键词：

D O I：

10.1016/S0301-0104(02)00616-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report stable and reproducible switching and memory effects in self-assembled monolayers (SAMs). We demonstrate realization of negative differential resistance (NDR) and charge storage in electronic devices that utilize single redox-center-contained SAM as the active component; and compare the effects of various redox centers to switching and storage behavior. The devices exhibit electronically programmable and erasable memory bits with bit retention times greater than 15 min at room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：127 / 145

页数：19

共 35 条

[1] RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE [J].