Growth of ZnSe single crystals

被引：16

作者：

Fang, CS ^{[1
]}

Gu, QT ^{[1
]}

Wei, JQ ^{[1
]}

Pan, QW ^{[1
]}

Shi, W ^{[1
]}

Wang, JY ^{[1
]}

机构：

[1] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 2-3期

关键词：

ZnSe single crystal; CVT and PVT growth;

D O I：

10.1016/S0022-0248(99)00616-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth conditions of ZnSe single crystals were investigated by chemical vapor transport (CVT) and physical vapor transport (PVT) methods. The growth temperatures were about 850 degrees C (CVT) and 1100 degrees C (PVT). Single crystals of 18-20 mm diameter. 30 mm long and orange colored were grown. The homogeneity of crystals was measured. The etch pit density of good crystals is in the range of (1-4) x 10(4) cm(-2) full-width at half-maximum (FWHM) of (0 0 4) X-ray double crystal rocking curve is 17 arcsec. These data indicate that the crystals have good homogeneity and no twin crystal boundaries. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：542 / 546

页数：5

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