Growth of ZnSe single crystal by CVT method with self-moving convection shield

被引：9

作者：

Fujiwara, S ^{[1
]}

Namikawa, Y ^{[1
]}

Hirota, Y ^{[1
]}

Irikura, M ^{[1
]}

Matsumoto, K ^{[1
]}

Kotani, T ^{[1
]}

机构：

[1] Sumitomo Elect Ind Ltd, Basic High Technol Labs, Konohana Ku, Osaka 5540024, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 196卷 / 01期

关键词：

D O I：

10.1016/S0022-0248(98)00895-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The self-moving convection shield was used in the growth of ZnSe single crystal by chemical vapor transport method using iodine as a transport agent. The reduction of the convection enables the growth of a 1-in diameter ZnSe single crystal. The incorporation efficiency of iodine on (1 1 1)B facet was proved re be larger than that on (1 0 0) facet. Impurity-hardening effect of incorporated iodine in the grown ZnSe crystal is also suggested. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

引用

页码：83 / 87

页数：5

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