Lasing characteristics of low threshold ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates

被引：60

作者：

Katayama, K ^{[1
]}

Yao, H ^{[1
]}

Nakanishi, F ^{[1
]}

Doi, H ^{[1
]}

Saegusa, A ^{[1
]}

Okuda, N ^{[1
]}

Yamada, T ^{[1
]}

Matsubara, H ^{[1
]}

Irikura, M ^{[1
]}

Matsuoka, T ^{[1
]}

Takebe, T ^{[1
]}

Nishine, S ^{[1
]}

Shirakawa, T ^{[1
]}

机构：

[1] Sumitomo Elect Ind Ltd, Basic High Technol Labs, Konohana Ku, Osaka 5540024, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 01期

关键词：

D O I：

10.1063/1.121781

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room temperature continuous wave operation of ZnSe-based blue/green laser diodes grown homoepitaxially on conductive ZnSe substrates with threshold current densities as low as 176 A/cm(2) has been demonstrated. This is the lowest reported threshold among all short wavelength lasers in the blue/green region. Lifetimes at room temperature of up to 2.1 h have been obtained for lasers with pre-existing defect densities lower than 3 x 10(4) cm(-2). (C) 1998 American Institute of Physics.

引用

页码：102 / 104

页数：3

共 12 条

[1]

CASEY HC, 1978, HETEROSTRUCTURE LA B, P169

[2]

FUJIWARA S, 1997, P 16 EL MAT S MIN, P255

[3] THE DEVELOPMENT OF LOW-VOLTAGE ROOM-TEMPERATURE CONTINUOUS-WAVE LASER-DIODES [J].

GUNSHOR, RL ;

HAN, J ;

NURMIKKO, AV ;

SALOKATVE, A .

JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :790-796

[4] A STUDY OF INTERNAL ABSORPTION IN ZN(CD)SE/ZNMGSSE SEMICONDUCTOR-LASERS [J].

KONDO, K ;

UKITA, M ;

YOSHIDA, H ;

KISHITA, Y ;

OKUYAMA, H ;

ITO, S ;

OHATA, T ;

NAKANO, K ;

ISHIBASHI, A .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (05) :2621-2626

[5] InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y ;

Kozaki, T ;

Umemoto, H ;

Sano, M ;

Chocho, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (12A) :L1568-L1571

[6] Low-threshold room-temperature CW operation of ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates [J].

Nakanishi, F ;

Doi, H ;

Okuda, N ;

Matsuoka, T ;

Katayama, K ;

Saegusa, A ;

Matsubara, H ;

Yamada, T ;

Uemura, T ;

Irikura, M ;

Nishine, S .

ELECTRONICS LETTERS, 1998, 34 (05) :496-497

[7] Continuous-wave operation of ZnSe-based laser diodes homoepitaxially grown on semi-insulating ZnSe substrates [J].

Ohki, A ;

Ohno, T ;

Matsuoka, T ;

Ichimura, Y .

ELECTRONICS LETTERS, 1997, 33 (11) :990-991

[8]

OHNO T, 1997, JPN J APPL PHYS PT 2, V36, P190

[9] PHOTOPUMPED ZNSE/ZNSSE BLUE SEMICONDUCTOR-LASERS AND A THEORETICAL CALCULATION OF THE OPTICAL GAIN [J].

SUEMUNE, I ;

NAKANISHI, K ;

FUJII, Y ;

KURODA, Y ;

FUJIMOTO, M ;

YAMANISHI, M .

JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) :1068-1072

[10] 100 h II-VI blue-green laser diode [J].

Taniguchi, S ;

Hino, T ;

Itoh, S ;

Nakano, K ;

Nakayama, N ;

Ishibashi, A ;

Ikeda, M .

ELECTRONICS LETTERS, 1996, 32 (06) :552-553

← 1 2 →