Low-threshold room-temperature CW operation of ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates

被引：11

作者：

Nakanishi, F ^{[1
]}

Doi, H ^{[1
]}

Okuda, N ^{[1
]}

Matsuoka, T ^{[1
]}

Katayama, K ^{[1
]}

Saegusa, A ^{[1
]}

Matsubara, H ^{[1
]}

Yamada, T ^{[1
]}

Uemura, T ^{[1
]}

Irikura, M ^{[1
]}

Nishine, S ^{[1
]}

机构：

[1] Sumitomo Elect Ind Ltd, Basic High Technol Labs, Konohana Ku, Osaka 554, Japan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 05期

关键词：

D O I：

10.1049/el:19980357

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SCH laser structures of ZnCdSe/ZnSe/ZnMgSSe have been grown on conductive ZnSe substrates by molecular beam epitaxy. Continuous-wave laser operation at room temperature was observed at a wavelength of 527.9nm (2.349eV). The threshold current and threshold voltage were 44mA (222A/cm(2)) and 5.4V, respectively. A lifetime of 74s at a constant light output power of 2mW was obtained.

引用

页码：496 / 497

页数：2

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