Continuous-wave operation of ZnSe-based laser diodes homoepitaxially grown on semi-insulating ZnSe substrates

被引：13

作者：

Ohki, A ^{[1
]}

Ohno, T ^{[1
]}

Matsuoka, T ^{[1
]}

Ichimura, Y ^{[1
]}

机构：

[1] HEWLETT PACKARD LABS, TAKATSU KU, KAWASAKI, KANAGAWA 213, JAPAN

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 11期

关键词：

semiconductor junction lasers; semiconductor growth; diodes;

D O I：

10.1049/el:19970624

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room temperature continuous-wave (CW) operation of a ZnSe-based blue-green laser diode, homo-epitaxially grown on semi-insulating ZnSe substrates, has been achieved. The threshold current and operation voltage under a CW electrical bias were 84mA and 15V, respectively. Under a pulsed electrical bias, lasing was achieved at up to 348K. The characteristic temperature (T-0) was 140K between 253 and 318K.

引用

页码：990 / 991

页数：2

共 8 条

[1] DEGRADATION OF II-VI BASED BLUE-GREEN LIGHT EMITTERS [J].

GUHA, S ;

DEPUYDT, JM ;

HAASE, MA ;

QIU, J ;

CHENG, H .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3107-3109

[2] BLUE-GREEN LASER-DIODES [J].

HAASE, MA ;

QIU, J ;

DEPUYDT, JM ;

CHENG, H .

APPLIED PHYSICS LETTERS, 1991, 59 (11) :1272-1274

[3] 1.5 MU-M REGION INP-GAINASP BURIED HETEROSTRUCTURE LASERS ON SEMI-INSULATING SUBSTRATES [J].

MATSUOKA, T ;

TAKAHEI, K ;

NOGUCHI, Y ;

NAGAI, H .

ELECTRONICS LETTERS, 1981, 17 (01) :12-14

[4]

NAKANO K, 1996, INT C SOL STAT DEV M, P62

[5]

NAKATSUKA S, 1996, P INT S BLU LAS LIGH, P232

[6]

OHNO T, 1997, JPN J APPL PHYS PT 2, V36, P190

[7]

SCHETZINA JF, 1996, P INT S BLUE LAS LIG, P74

[8] 100 h II-VI blue-green laser diode [J].

Taniguchi, S ;

Hino, T ;

Itoh, S ;

Nakano, K ;

Nakayama, N ;

Ishibashi, A ;

Ikeda, M .

ELECTRONICS LETTERS, 1996, 32 (06) :552-553

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