Evaluation and control of defects, formed by keV-MeV implantation

Ion implantation has been used in shallow junction formation, well formation, buried layer formation, etc. Ultra-shallow junction formation at energies below several keV and gettering-sites formation at several MeV with a high dose have been investigated. However, problems for these applications are defect formation, which induces dopant-enhanced diffusion and junction leakage current increase. In this paper, two topics, related to these applications, are presented. The first topic is the evaluation of dopant-enhanced diffusion in source/drain formation by preamorphization. The second topic is the defect reduction in MeV implantation by RTA with a high ramping rate above 50 degrees C/s. These results suggest that applications of ion implantation would spread in wider regions, if enhanced diffusion at ultra low energies and/or defect formation at MeV could be reduced.