DOPANT, DEFECTS AND OXYGEN INTERACTION IN MEV IMPLANTED CZOCHRALSKI SILICON

被引：7

作者：

LAFERLA, A

GALVAGNO, G

RAINERI, V

PRIOLO, F

CARNERA, A

GASPAROTTO, A

RIMINI, E

机构：

[1] CORIMME,I-95121 CATANIA,ITALY

[2] UNIV PADUA,DIPARTIMENTO FIS,I-35131 PADUA,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 96卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(94)00489-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

An oxygen precipitation phenomenon was evidenced on high energy implanted Czochralski silicon samples. Al, Si, P, O and C ions with energies in the 1-6.8 MeV range and doses in the 4 X 10(14) - 1 X 10(15)/cm(2) range were single or double implanted in CZ-Si. A strong interaction was evidenced between the implanted species, the damage and the oxygen present in the substrates after annealing at 1100 or 1200 degrees C for 30 min. The oxygen precipitation is greatly enhanced by the presence of Al that interacting with O results almost completely electrically inactive.

引用

页码：232 / 235

页数：4

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