ANNEALING BEHAVIOR OF MEV IMPLANTED CARBON IN SILICON

被引:22
作者
ISOMAE, S
ISHIBA, T
ANDO, T
TAMURA, M
机构
[1] HITACHI LTD,CTR DEVICE DEV,OME,TOKYO 198,JAPAN
[2] OPTOELECTR TECHNOL RES LAB,TSUKUBA,IBARAKI 30026,JAPAN
关键词
D O I
10.1063/1.354474
中图分类号
O59 [应用物理学];
学科分类号
摘要
The annealing behavior of carbon implanted at 1.3 MeV with a dose of 5X10(19) ions/m2 into Czochralski-grown silicon wafers is investigated using an x-ray double-crystal method, transmission electron microscopy, secondary-ion-mass spectroscopy, and infrared-absorption spectroscopy. For comparison, the behavior of boron implanted at 2.0 MeV with 5X10(19) ions/m2 is also investigated. X-ray rocking curve analysis shows that carbon produces a larger lattice strain than boron. For the samples annealed at 1273 K, x-ray data indicate that the carbon atoms, unlike the boron atoms, do not occupy substitutional sites. In addition, the present experimental data suggest that the interaction of interstitial carbon atoms with silicon self-interstitials produced by ion implantation suppresses the generation of dislocations and brings about the reduction of lattice strain in the implanted region.
引用
收藏
页码:3815 / 3820
页数:6
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