B-DIFFUSION IN SI PREDAMAGED WITH SI+ NEAR THE THRESHOLD DOSE OF AMORPHIZATION

被引：4

作者：

KASE, M

KIKUCHI, Y

KIMURA, M

MORI, H

OGAWA, T

机构：

[1] Electronics Devices Group, Fujitsu Limited, Nakahara-ku, Kawasaki 211

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 11期

关键词：

D O I：

10.1063/1.105492

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied B diffusion in Si predamaged with Si+ near the threshold dose of amorphization. In Si preimplanted in the amorphization condition (Si+ 40 keV, 5.0 X 10(14) cm-2), a B-profile kink appears to be induced from retarded diffusion after 800-degrees-C annealing. In the 3.0 X 10(14) cm-2 preimplanted sample, an enhanced diffusion tail appears in addition to the kink. The tail has a diffusivity of 1 X 10(-14) cm2/s. Amorphous islands about 10 nm in diameter were observed in Si predamaged with Si+ 40 keV, 3.3 X 10(14) cm-2 by a cross-sectional transmission electron microscope. We speculate that the kink and tail originate in the vacancy and interstitial-rich region, respectively.

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页码：1335 / 1337

页数：3

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