Cu-based multinary compounds and their crystal growth: synthesis processes, phase diagrams and control of vapor pressures

被引:7
作者
Matsushita, H
Katsui, A
Takizawa, T
机构
[1] Tokai Univ, Sch High Technol Human Welfare, Dept Mat Sci & Technol, Shizuoka 4100395, Japan
[2] Nihon Univ, Coll Human & Sci, Dept Phys, Setagaya Ku, Tokyo 1568550, Japan
关键词
phase diagrams; single crystal growth; semiconducting ternary compounds;
D O I
10.1016/S0022-0248(01)02298-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In order to overcome the difficulties in getting bulk single crystals of Cu-based multinary compounds of high quality, we have investigated the chemical reaction involving single phase formation, the phase diagrams for bypassing the peritectic reaction, and the solid-state phase transition and the effect of VI vapor pressure on the crystal growth. The selenization or sulfurization method of a CuIn alloy is devised to grow single crystals of CuInSe2 or CuInS2. To bypass the peritectic reaction of CuGaSe2, solution growth has been performed by using a self-flux, and it is shown that large single crystals can be grown better from a CuSe solvent than from a Cu2Se solvent. In addition, a solvent of Sb2Se3 is used to grow CuInSe2 single crystals at temperatures below the solid-state phase transition. Furthermore, the melt growth under controlled VI vapor pressure is adopted to grow high-quality crystals of CuInSe2 and CuInS2. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1986 / 1992
页数:7
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