Hot spots in multicrystalline silicon solar cells: avalanche breakdown due to etch pits

被引：72

作者：

Bauer, J. ^{[1
]}

Wagner, J. -M. ^{[1
]}

Lotnyk, A. ^{[1
]}

Blumtritt, H. ^{[1
]}

Lim, B. ^{[2
]}

Schmidt, J. ^{[2
]}

Breitenstein, O. ^{[1
]}

机构：

[1] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany

[2] Inst Solarenergieforsch Hameln Emmerthal ISFH, D-31860 Emmerthal, Germany

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2009年 / 3卷 / 2-3期

关键词：

P-N-JUNCTIONS; CURVATURE; VOLTAGE;

D O I：

10.1002/pssr.200802250

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Multicrystalline silicon solar cells typically show hard breakdown beginning from about -13 V bias, which leads to the well-known hot-spot problem. Using special lock-in thermography techniques, hard breakdown has been found to occur in regions of avalanche multiplication. A systematic study of these regions by various electron microscopy techniques has shown that the avalanche breakdown occurs at cone-shaped holes, located at dislocations and caused by acidic texture etch. At their bottom, these etch pits lead to a strongly curved p-n junction exhibiting an electrostatic tip effect which quantitatively explains the field enhancement needed for enabling avalanche breakdown. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：40 / 42

页数：3

共 20 条

[1] Experimental study of mismatch and shading effects in the I-V characteristic of a photovoltaic module [J].

Alonso-García, MC ;

Ruiz, JM ;

Chenlo, F .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2006, 90 (03) :329-340

[2] MICROPLASMA BREAKDOWN AND HOT-SPOTS IN SILICON SOLAR-CELLS [J].

BISHOP, JW .

SOLAR CELLS, 1989, 26 (04) :335-349

[3] EBIC and luminescence studies of defects in solar cells [J].

Breitenstein, O. ;

Bauer, J. ;

Kittler, M. ;

Arguirov, T. ;

Seifert, W. .

SCANNING, 2008, 30 (04) :331-338

[4] Shunt types in crystalline silicon solar cells [J].

Breitenstein, O ;

Rakotoniaina, JP ;

Al Rifai, MH ;

Werner, M .

PROGRESS IN PHOTOVOLTAICS, 2004, 12 (07) :529-538

[5]

BREITENSTEIN O, 2008, RES APPL, V16, P679

[6]

BREITENSTEIN O, P BIAMS 08 IN PRESS, DOI DOI 10.1016/J.SPMI.2008.10.025

[7]

Breitenstein O., 2003, Lock-in thermography: basics and use for functional diagnostics of electronic components

[8] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J].

CHYNOWETH, AG ;

MCKAY, KG .

PHYSICAL REVIEW, 1956, 102 (02) :369-376

[9] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J].

GOETZBERGER, A ;

SCARLETT, RM ;

HAITZ, RH ;

MCDONALD, B .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1591-+

[10] Novel evaluation of intra-grain defects in polycrystalline silicon solar cells using light emission [J].

Kaji, Y ;

Kondo, H ;

Takahashi, Y ;

Yamazaki, T ;

Uraoka, Y ;

Fuyuki, T .

Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005, 2005, :1346-1348

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