Time dependent dielectric breakdown characteristics of MOS capacitors with Si-implanted SiO2

被引：6

作者：

Matsuda, T ^{[1
]}

Ohzone, T ^{[1
]}

Hori, T ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD,SEMICOND RES CTR,MORIGUCHI,OSAKA 570,JAPAN

来源：

SOLID-STATE ELECTRONICS | 1996年 / 39卷 / 10期

关键词：

D O I：

10.1016/0038-1101(96)00057-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The current-voltage and time dependent dielectric breakdown characterics of MOS capacitors with various Si-implanted SiO2 layers of 50 nm thickness were measured at inversion and accumulation condition. In comparison with unimplanted SiO2, some implanted SiO2 samples have a higher breakdown voltage and a maximum allowable constant voltage or current stress for a 10-year life-time. The latter suggests the possibility of SiO2 electrical characteristics engineering by Si-implantation. Copyright (C) 1996 Elsevier Science Ltd

引用

页码：1427 / 1434

页数：8

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