Growth of single-crystalline cubic GaN nanotubes with rectangular cross-sections

被引：54

作者：

Hu, JQ

Bando, Y

Zhan, JH

Xu, FF

Sekiguchi, T

Golberg, D

机构：

[1] NIMS, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan

[2] NIMS, Nanomat Lab, Tsukuba, Ibaraki 3050044, Japan

来源：

ADVANCED MATERIALS | 2004年 / 16卷 / 16期

关键词：

D O I：

10.1002/adma.200400016

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The first reported growth of single-crystalline GaN nanotubes with rectangular cross-sections (see Figure) synthesized using Ga2O3 powder and NH3 as reagents is described. It is envisioned that. once the cores are filled with different semiconducting materials of various bandgaps, the materials could be used for interesting electrical and optical nanodevices.

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页码：1465 / +

页数：5

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