Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

被引:2317
作者
Jariwala, Deep [1 ]
Sangwan, Vinod K. [1 ]
Lauhon, Lincoln J. [1 ]
Marks, Tobin J. [1 ,2 ]
Hersam, Mark C. [1 ,2 ,3 ]
机构
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[2] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[3] Northwestern Univ, Dept Med, Evanston, IL 60208 USA
基金
美国国家科学基金会;
关键词
molybdenum disulfide; digital electronics; field-effect transistor; van der Waals heterostructure; nanoelectronics; optoelectronics; flexible electronics; valleytronics; photodetector; photovoltaic; solar cell; light-emitting diode; sensor; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; FEW-LAYER MOS2; SCANNING PHOTOCURRENT MICROSCOPY; VAPOR-PHASE GROWTH; HIGH-PERFORMANCE; MOLYBDENUM-DISULFIDE; MONOLAYER MOS2; LARGE-AREA; HIGH-MOBILITY;
D O I
10.1021/nn500064s
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Toward that end, several classes of high-performance devices have been reported along with significant progress in understanding their physical properties. Here, we present a review of the architecture, operating principles, and physics of electronic and optoelectronic devices based on ultrathin transition metal dichalcogenide semiconductors. By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.
引用
收藏
页码:1102 / 1120
页数:19
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