Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

被引：207

作者：

Amani, Matin ^{[1
,2
]}

Chin, Matthew L. ^{[1
]}

Birdwell, A. Glen ^{[1
]}

O'Regan, Terrance P. ^{[1
]}

Najmaei, Sina ^{[3
]}

Liu, Zheng ^{[3
]}

Ajayan, Pulickel M. ^{[3
]}

Lou, Jun ^{[3
]}

Dubey, Madan ^{[1
]}

机构：

[1] USA, Sensors & Electron Devices Directorate, Res Lab, Adelphi, MD 20723 USA

[2] Oregon State Univ, Dept Elect Engn, Corvallis, OR 97331 USA

[3] Rice Univ, Dept Mech Engn & Mat Sci, Houston, TX 77005 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 19期

关键词：

ATOMIC LAYERS; MOBILITY;

D O I：

10.1063/1.4804546

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molybdenum disulfide (MoS2) field effect transistors (FET) were fabricated on atomically smooth large-area single layers grown by chemical vapor deposition. The layer qualities and physical properties were characterized using high-resolution Raman and photoluminescence spectroscopy, scanning electron microscopy, and atomic force microscopy. Electronic performance of the FET devices was measured using field effect mobility measurements as a function of temperature. The back-gated devices had mobilities of 6.0 cm(2)/V s at 300 K without a high-k dielectric overcoat and increased to 16.1 cm(2)/V s with a high-k dielectric overcoat. In addition the devices show on/off ratios ranging from 10(5) to 10(9). (C) 2013 AIP Publishing LLC.

引用

页数：4

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