Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

被引：246

作者：

Hwang, Wan Sik ^{[1
]}

Remskar, Maja ^{[2
]}

Yan, Rusen ^{[1
]}

Protasenko, Vladimir ^{[1
]}

Tahy, Kristof ^{[1
]}

Chae, Soo Doo ^{[1
]}

Zhao, Pei ^{[1
]}

Konar, Aniruddha ^{[1
]}

Xing, Huili ^{[1
]}

Seabaugh, Alan ^{[1
]}

Jena, Debdeep ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[2] Jozef Stefan Inst, Dept Solid State Phys, SI-1000 Ljubljana, Slovenia

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 01期

基金：

美国国家科学基金会;

关键词：

energy gap; field effect transistors; multilayers; Schottky barriers; semiconductor materials; tungsten compounds; CARBON NANOTUBE TRANSISTORS; GRAPHENE; MOS2; SCATTERING; FILMS;

D O I：

10.1063/1.4732522

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer crystal semiconductor WS2. The Schottky-barrier FETs demonstrate ambipolar behavior and a high (similar to 10(5)x) on/off current ratio at room temperature with current saturation. The behavior is attributed to the presence of an energy bandgap in the ultrathin layered semiconductor crystal material. The FETs also show clear photo response to visible light. The promising electronic and optical characteristics of the devices combined with the chemical synthesis, and flexibility of layered semiconductor crystals such as WS2 make them attractive for future electronic and optical devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4732522]

引用

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