SHORT CHANNEL EFFECTS IN MOS-TRANSISTORS

被引：15

作者：

BJORKQVIST, K ^{[1
]}

ARNBORG, T ^{[1
]}

机构：

[1] ROYAL INST TECHNOL,DEPT APPL ELECTR,S-10044 STOCKHOLM 70,SWEDEN

来源：

PHYSICA SCRIPTA | 1981年 / 24卷 / 02期

关键词：

D O I：

10.1088/0031-8949/24/2/016

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：418 / 421

页数：4

共 12 条

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[7]

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[8]

HORI R, 1976, JAPANESE J APPLIED S, V15

[9] ANALYSIS OF THRESHOLD VOLTAGE FOR SHORT-CHANNEL IGFETS [J].

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