Single-particle tunneling in doped graphene-insulator-graphene junctions

被引：139

作者：

Feenstra, R. M. ^{[1
]}

Jena, Debdeep ^{[2
]}

Gu, Gong ^{[3
]}

机构：

[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

[2] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[3] Univ Tennessee, Dept Elect Engn & Comp Sci, Knoxville, TN 37996 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 04期

基金：

美国国家科学基金会;

关键词：

2-DIMENSIONAL GRAPHITE SYSTEM; QUANTUM TRANSPORT; ELECTRON-SYSTEMS; HIGH-QUALITY; LARGE-AREA; SURFACE; FILMS; PARALLEL; DEVICE;

D O I：

10.1063/1.3686639

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The characteristics of tunnel junctions formed between n- and p-doped graphene are investigated theoretically. The single-particle tunnel current that flows between the two-dimensional electronic states of the graphene (2D-2D tunneling) is evaluated. At a voltage bias such that the Dirac points of the two electrodes are aligned, a large resonant current peak is produced. The magnitude and width of this peak are computed, and its use for devices is discussed. The influences of both rotational alignment of the graphene electrodes and structural perfection of the graphene are also discussed. (C) 2012 American Institute of Physics. [doi:10.1063/1.3686639]

引用

页数：10

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