Single step, complementary doping of graphene

被引：77

作者：

Brenner, Kevin ^{[1
]}

Murali, Raghunath ^{[1
]}

机构：

[1] Georgia Inst Technol, Nanotechnol Res Ctr, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 06期

关键词：

bonds (chemical); elemental semiconductors; graphene; polymer films; semiconductor doping; semiconductor junctions; semiconductor thin films; FILMS; GAS;

D O I：

10.1063/1.3308482

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A single-step doping method capable of high resolution n- and p-type doping of large area graphene is presented. Thin films of hydrogen silsesquoxane on exfoliated graphene are used to demonstrate both electron and hole doping through control of the polymer cross-linking process. This dual-doping is attributed to the mismatch in bond strength of the Si-H and Si-O bonds in the film as well as out-gassing of hydrogen with increasing cross-linking. A high-resolution graphene p-n junction is demonstrated using this method.

引用

页数：3

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