Chemical Doping and Electron-Hole Conduction Asymmetry in Graphene Devices

被引：451

作者：

Farmer, Damon B. ^{[1
]}

Golizadeh-Mojarad, Roksana ^{[2
]}

Perebeinos, Vasili ^{[1
]}

Lin, Yu-Ming ^{[1
]}

Tulevski, George S. ^{[1
]}

Tsang, James C. ^{[1
]}

Avouris, Phaedon ^{[1
]}

机构：

[1] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47906 USA

来源：

NANO LETTERS | 2009年 / 9卷 / 01期

关键词：

RAMAN-SCATTERING; CARBON NANOTUBES; FUNCTIONALIZATION; FILMS;

D O I：

10.1021/nl803214a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We investigate poly(ethylene imine) and diazonium salts as stable, complementary dopants on graphene. Transport in graphene devices doped with these molecules exhibits asymmetry in electron and hole conductance. The conductance of one carrier is preserved, while the conductance of the other carrier decreases. Simulations based on nonequilibrium Green's function formalism suggest that the origin of this asymmetry is imbalanced carrier injection from the graphene electrodes caused by misalignment of the electrode and channel neutrality points.

引用

页码：388 / 392

页数：5

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