Behavior of a chemically doped graphene junction

被引：108

作者：

Farmer, Damon B. ^{[1
]}

Lin, Yu-Ming ^{[1
]}

Afzali-Ardakani, Ali ^{[1
]}

Avouris, Phaedon ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 21期

关键词：

carrier mobility; doping profiles; graphene; organic compounds; transistors; TRANSISTOR;

D O I：

10.1063/1.3142865

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polyethylene imine and diazonium salts are used as complementary molecular dopants to engineer a doping profile in a graphene transistor. Electronic transport in this device reveals the presence of two distinct resistance maxima, alluding to neutrality point separation and subsequent formation of a spatially abrupt junction. Carrier mobility in this device is not significantly affected by molecular doping or junction formation, and carrier transmission is found to scale inversely with the effective channel length of the device. Chemical dilutions are used to modify the dopant concentration and, in effect, alter the properties of the junction.

引用

页数：3

共 20 条

[1] The focusing of electron flow and a Veselago lens in graphene p-n junctions [J].

Cheianov, Vadim V. ;

Fal'ko, Vladimir ;

Altshuler, B. L. .

SCIENCE, 2007, 315 (5816) :1252-1255

[2] Charged-impurity scattering in graphene [J].

Chen, J. -H. ;

Jang, C. ;

Adam, S. ;

Fuhrer, M. S. ;

Williams, E. D. ;

Ishigami, M. .

NATURE PHYSICS, 2008, 4 (05) :377-381

[3] Graphene nano-ribbon electronics [J].

Chen, Zhihong ;

Lin, Yu-Ming ;

Rooks, Michael J. ;

Avouris, Phaedon .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 40 (02) :228-232

[4] Chemical Doping and Electron-Hole Conduction Asymmetry in Graphene Devices [J].

Farmer, Damon B. ;

Golizadeh-Mojarad, Roksana ;

Perebeinos, Vasili ;

Lin, Yu-Ming ;

Tulevski, George S. ;

Tsang, James C. ;

Avouris, Phaedon .

NANO LETTERS, 2009, 9 (01) :388-392

[5] ALD of high-κ dielectrics on suspended functionalized SWNTs [J].

Farmer, DB ;

Gordon, RG .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2005, 8 (04) :G89-G91

[6] The rise of graphene [J].

Geim, A. K. ;

Novoselov, K. S. .

NATURE MATERIALS, 2007, 6 (03) :183-191

[7] Transport measurements across a tunable potential barrier in graphene [J].

Huard, B. ;

Sulpizio, J. A. ;

Stander, N. ;

Todd, K. ;

Yang, B. ;

Goldhaber-Gordon, D. .

PHYSICAL REVIEW LETTERS, 2007, 98 (23)

[8] Chiral tunnelling and the Klein paradox in graphene [J].

Katsnelson, M. I. ;

Novoselov, K. S. ;

Geim, A. K. .

NATURE PHYSICS, 2006, 2 (09) :620-625

[9] High-performance carbon nanotube field-effect transistor with tunable Polarities [J].

Lin, YM ;

Appenzeller, J ;

Knoch, J ;

Avouris, P .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2005, 4 (05) :481-489

[10] Electrical observation of subband formation in graphene nanoribbons [J].

Lin, Yu-Ming ;

Perebeinos, Vasili ;

Chen, Zhihong ;

Avouris, Phaedon .

PHYSICAL REVIEW B, 2008, 78 (16)

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