TEM investigations on the heteroepitaxial nucleation of CVD diamond on (001) silicon substrates

被引：19

作者：

Wurzinger, P ^{[1
]}

Fuchs, N ^{[1
]}

Pongratz, P ^{[1
]}

Schreck, M ^{[1
]}

Hessmer, R ^{[1
]}

Stritzker, B ^{[1
]}

机构：

[1] UNIV AUGSBURG,LEHRSTUHL EXPT PHYS 4,D-86135 AUGSBURG,GERMANY

来源：

关键词：

TEM; heteroepitaxial nucleation; CVD diamond; (001) silicon substrates;

D O I：

10.1016/S0925-9635(96)00721-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A bias-enhanced nucleation process for the heteroepitaxial diamond growth by microwave plasma CVD on silicon is studied with TEM. Samples nucleated for different times are investigated and a time schedule of crystal phase formation is found: nanocrystalline beta-SiC with small statistical deviations from the heteroepitaxial orientation forms rapidly at the silicon substrate surface. The layer containing the nanocrystals grows and forms ridges parallel to the [110](Si) directions. Diamond nucleation occurs only on top of this layer, whereby the deviations from the heteroepitaxial orientation are taken over and extended. Finally, the beta-SiC side of the diamond crystals is etched by the plasma. (C) 1997 Elsevier Science S.A.

引用

页码：752 / 757

页数：6

共 12 条

[1] THE INFLUENCE OF THE GROWTH-PROCESS ON THE FILM TEXTURE OF EPITAXIALLY NUCLEATED DIAMOND ON SILICON(001) [J].

HESSMER, R ;

SCHRECK, M ;

GEIER, S ;

RAUSCHENBACH, B ;

STRITZKER, B .

[2] DIAMOND EPITAXY ON (001)SILICON - AN INTERFACE INVESTIGATION [J].

JIANG, X ;

JIA, CL .

APPLIED PHYSICS LETTERS, 1995, 67 (09) :1197-1199

[3] EPITAXIAL DIAMOND THIN-FILMS ON (001) SILICON SUBSTRATES [J].

JIANG, X ;

KLAGES, CP ;

ZACHAI, R ;

HARTWEG, M ;

FUSSER, HJ .

APPLIED PHYSICS LETTERS, 1993, 62 (26) :3438-3440

[4] NUCLEATION AND INITIAL GROWTH-PHASE OF DIAMOND THIN-FILMS ON (100)-SILICON [J].

JIANG, X ;

SCHIFFMANN, K ;

KLAGES, CP .

PHYSICAL REVIEW B, 1994, 50 (12) :8402-8410

[5] An FTIR study of the heteroepitaxy of diamond on silicon [J].

John, P ;

Graham, C ;

Milne, DK ;

Jubber, MG ;

Wilson, JIB .

[6] ORIENTED NUCLEATION AND GROWTH OF DIAMOND FILMS ON BETA-SIC AND SI [J].

KOHL, R ;

WILD, C ;

HERRES, N ;

KOIDL, P ;

STONER, BR ;

GLASS, JT .

APPLIED PHYSICS LETTERS, 1993, 63 (13) :1792-1794

[7] FORMATION OF HIGHLY ORIENTED DIAMOND FILM ON CARBURIZED (100)SI SUBSTRATE [J].

MAEDA, H ;

IRIE, M ;

HINO, T ;

KUSAKABE, K ;

MOROOKA, S .

JOURNAL OF MATERIALS RESEARCH, 1995, 10 (01) :158-164

[8] STRUCTURAL CHARACTERIZATION OF DIAMOND FILMS GROWN EPITAXIALLY ON SILICON [J].

SCHRECK, M ;

HESSMER, R ;

GEIER, S ;

RAUSCHENBACH, B ;

STRITZKER, B .

[9] CHARACTERIZATION OF BIAS-ENHANCED NUCLEATION OF DIAMOND ON SILICON BY INVACUO SURFACE-ANALYSIS AND TRANSMISSION ELECTRON-MICROSCOPY [J].

STONER, BR ;

MA, GHM ;

WOLTER, SD ;

GLASS, JT .

PHYSICAL REVIEW B, 1992, 45 (19) :11067-11084

[10] Bias-enhanced diamond nucleation on silicon - A TEM study [J].

Wurzinger, P ;

Pongratz, P ;

Gerber, J ;

Ehrhardt, H .

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