Focused electron beam induced deposition of a periodic transparent nano-optic pattern

被引：37

作者：

Perentes, A ^{[1
]}

Bachmann, A ^{[1
]}

Leutenegger, M ^{[1
]}

Utke, I ^{[1
]}

Sandu, C ^{[1
]}

Hoffmann, P ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, EPFL, Adv Photon Lab, CH-1015 Lausanne, Switzerland

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 73-4卷

关键词：

focused electron beam induced deposition; photonic band gap; transparent substrate; spectroscopic micro-ellipsometry;

D O I：

10.1016/j.mee.2004.02.079

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we describe the fabrication of a two-dimensional photonic band gap structure by focused electron beam induced deposition. Structure geometry is computed in order to create a light-trapping effect at 632 nm wavelength. Deposits produced using tetraethyl orthosilicate (SiO4C8H20) as precursor were studied to determine their chemical composition and geometrical, dimensions. The deposited material has a refractive index (n) over tilde = 1.85 + i 3.9 x 10(-4) at 632 nm. Transmission electron microscopy revealed deposits obtained at low currents (100 pA) are amorphous. The structure was deposited on a quartz prism, coated with a transparent conducting antimony-doped tin oxide layer to minimize electron beam drifts and distortions. Multiple beam re-alignments during the deposition assured drift compensation. Optical characterisation of the photonic band gap effect is currently under investigation. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：412 / 416

页数：5

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