HIGH-RESOLUTION ELECTRON-BEAM INDUCED DEPOSITION

被引：223

作者：

KOOPS, HWP

WEIEL, R

KERN, DP

BAUM, TH

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] IBM,ALMADEN RES CTR,SAN JOSE,CA 95120

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 01期

关键词：

D O I：

10.1116/1.584045

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：477 / 481

页数：5

共 21 条

[1]

BAUM TH, IN PRESS J ELECTROCH

[2] REPAIR TECHNIQUES FOR SILICON TRANSMISSION MASKS USED FOR SUBMICRON LITHOGRAPHY [J].

BEHRINGER, UFW ;

VETTIGER, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :94-99

[3] ANALYSIS OF THIN-FILMS ARISING FROM ELECTRON-BEAM-INDUCED, ION-BEAM-INDUCED AND PHOTON-BEAM-INDUCED DECOMPOSITION OF CR(CO)6 AND AL(CH3)3 [J].

BIGELOW, RW ;

BLACK, JG ;

DUKE, CB ;

SALANECK, WR ;

THOMAS, HR .

THIN SOLID FILMS, 1982, 94 (03) :233-247

[4] ELECTRON-BEAM FABRICATION OF 80-A METAL STRUCTURES [J].

BROERS, AN ;

MOLZEN, WW ;

CUOMO, JJ ;

WITTELS, ND .

APPLIED PHYSICS LETTERS, 1976, 29 (09) :596-598

[5]

BROERS AN, 1981, APPL PHYS LETT, V38, P253

[6]

BUCKLEY CJ, 1985, P SOC PHOTO-OPT INST, V537, P213, DOI 10.1117/12.947504

[7]

CHANG THP, 1967, THESIS CAMBRIDGE

[8] FORMATION OF SILICON-NITRIDE STRUCTURES BY DIRECT ELECTRON-BEAM WRITING [J].

CHIN, BH ;

EHRLICH, G .

APPLIED PHYSICS LETTERS, 1981, 38 (04) :253-255

[9] PAPER-TAPE-CONTROLLED ELECTRON-PROBE RESIST EXPOSURE AND DIRECT METALLIC DEPOSITION [J].

DIX, C ;

BALLANTYNE, JP ;

NIXON, WC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) :641-+

[10]

MARTIN JP, 1972, THESIS U TUEBINGEN

← 1 2 3 →