A physics-based, dynamic thermal impedance model for SOI MOSFET's

A physics-based compact analytical expression for the thermal impedance of SOI MOSFET's is presented, This new model extends the steady-state thermal model in [1] to allow for transient and ac analyses, while improving self-consistency for large devices. The modified steady-state model compares favorably to measurements, Using the software package Thermal Impedance Pre-Processor (TIPP), a multiple-pole circuit can be fitted to the thermal-impedance model, The new model is compared to three-dimensional (3-D) ANSYS(1) transient simulations with good results, The thermal-equivalent circuit is used in conjunction with a modified version of SOISPICE to give efficient electrothermal simulations in the de and transient regimes.