Six cases of reliability study of Pb-free solder joints in electronic packaging technology

被引:1354
作者
Zeng, K [1 ]
Tu, KN [1 ]
机构
[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
关键词
solder joints; electromigration; lead-free; reliability; Sn whisker; solder interfacial reaction; intermetallic compounds;
D O I
10.1016/S0927-796X(02)00007-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Solder is widely used to connect chips to their packaging substrates in flip chip technology as well as in P surface mount technology. At present, the electronic packaging industry is actively searching for Pb-free solders due to environmental concern of Pb-based solders. Concerning the reliability of Pb-free solders, some electronic companies are reluctant to adopt them into their high-end products. Hence, a review of the reliability behavior of Pb-free solders is timely. We use the format of "case study" to review six reliability problems of Pb-free solders in electronic packaging technology. We conducted analysis of these cases on the basis of thermodynamic driving force, time-dependent kinetic processes, and morphology and microstructure changes. We made a direct comparison to the similar problem in SnPb solder whenever it is available. Specifically, we reviewed: (1) interfacial reactions between Pb-free solder and thick metallization of bond-pad on the substrate-side, (2) interfacial reactions between Pb-free solder and thin-film under-bump metallization on the chip-side, (3) the growth of a layered intermetallic compound (IMC) by ripening in solid state aging of solder joints, (4) a long range interaction between chip-side and substrate-side metallizations across a solder joint, (5) electromigration in flip chip solder joints, and finally (6) Sn whisker growth on Pb-free finish on Cu leadframe. Perhaps, these cases may serve as helpful references to the understanding of other reliability behaviors of Pb-free solders. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码:55 / 105
页数:51
相关论文
共 120 条
[1]   Lead-free solders in microelectronics [J].
Abtew, M ;
Selvaduray, G .
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2000, 27 (5-6) :95-141
[2]   ON THE FORMATION AND PROPERTIES OF HELICAL DISLOCATIONS [J].
AMELINCKX, S ;
BONTINCK, W ;
DEKEYSER, W ;
SEITZ, F .
PHILOSOPHICAL MAGAZINE, 1957, 2 (15) :355-&
[3]  
Anderson I. E., 1996, Proceedings of the Technical Program. NEPCON West '96 Conference, P882
[4]  
BANERJI K, 1993, P 1 INT C MICR MECH, P431
[5]   STRESS GENERATION BY ELECTROMIGRATION [J].
BLECH, IA ;
HERRING, C .
APPLIED PHYSICS LETTERS, 1976, 29 (03) :131-133
[6]   WHISKER GROWTH IN AL THIN-FILMS [J].
BLECH, IA ;
PETROFF, PM ;
TAI, KL ;
KUMAR, V .
JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) :161-169
[7]   ELECTROMIGRATION IN THIN ALUMINUM FILMS ON TITANIUM NITRIDE [J].
BLECH, IA .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1203-1208
[8]  
BOLCAVAGE A, 1995, APPLICATIONS OF THERMODYNAMICS IN THE SYNTHESIS AND PROCESSING OF MATERIALS, P171
[9]  
BRADLEY E, 1995, ELEC COMP C, P1028, DOI 10.1109/ECTC.1995.517818
[10]  
BRANDENBURG S, 1998, P SURF MOUNT INT C E, P337