Magnetoresistance and spin electronics

被引：64

作者：

Barthélémy, A

Fert, A

Contour, JP

Bowen, M

Cros, V

De Teresa, JM

Hamzic, A

Faini, JC

George, JM

Grollier, J

Montaigne, F

Pailloux, F

Petroff, F

Vouille, C

机构：

[1] CNRS Thales, Unite Mixte Phys, F-91404 Orsay, France

[2] CNRS, L2M, F-92250 Bagneux, France

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2002年 / 242卷

关键词：

giant magnetoresistance; spin injection; tunnel junctions;

D O I：

10.1016/S0304-8853(01)01193-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We review several topics in the field of spin electronics: (i) giant magnetoresistance observed in magnetic multilayers; (ii) magnetization reversal by spin injection and (iii) spin-polarized tunneling in magnetic tunnel junctions combining electrodes of ferromagnetic transition metal and half-metallic oxide. (C) 2002 Elsevier Science B.V. All rights reserved.

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页码：68 / 76

页数：9

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