Smart Gas Sensor and Noise Properties of Single ZnO Nanowire

被引：11

作者：

Choi, Soo-Han ^{[1
,3
]}

Yee, Seong-Min ^{[3
]}

Ji, Hyun-Jin ^{[3
]}

Choi, Jae-Wan ^{[3
]}

Cho, Young-Seung ^{[2
,3
]}

Kim, Gyu-Tae ^{[3
]}

机构：

[1] Samsung Elect, CAE Team, Semicond R&D Ctr, Hwasung 445701, Gyeonggi Do, South Korea

[2] Samsung Elect, Technol Dev Team, Semicond R&D Ctr, Hwasung 445701, Gyeonggi Do, South Korea

[3] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 06期

关键词：

1/F NOISE; FABRICATION;

D O I：

10.1143/JJAP.48.06FD13

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new zinc oxide nanowire (NW) gas sensor based on the commercially available 0.35 mu m complementary metal-oxide-semiconductor (CMOS) process is developed. The smart gas sensor consists of a gas-sensing resistor and an interface circuit for resistance measurement. The single ZnO NW synthesized by the vapor-liquid-solid (VLS) process is utilized as the gas-sensing resistor. The interface circuit for the resistance measurement of the single ZnO NW is composed of a ring oscillator circuit, in which the oscillation period is optimized with regards to the ZnO NW resistance and external capacitance to. accurately detect the resistance of the ZnO NW after exposure to the gas. Because the low-frequency noise contains information about the charge, fluctuations which are important for determining the gas-sensing reliability, the low-frequency noise of the single ZhO NW at various agate voltages, source-drain voltages and resistances is systematically characterized and compared with those of CMOS field-effect transistors (FETs) and network carbon nanotubes (CNTs) resistor. (C) 2009 The Japan Society of Applied Physics

引用

页数：4

共 13 条

[1] High-performance ZnO nanowire field effect transistors [J].

Chang, Pai-Chun ;

Fan, Zhiyong ;

Chien, Chung-Jen ;

Stichtenoth, Daniel ;

Ronning, Carsten ;

Lu, Jia Grace .

APPLIED PHYSICS LETTERS, 2006, 89 (13)

[2] 1/f noise in carbon nanotubes [J].

Collins, PG ;

Fuhrer, MS ;

Zettl, A .

APPLIED PHYSICS LETTERS, 2000, 76 (07) :894-896

[3]

Fang Z, 2004, ICIA 2004: Proceedings of 2004 International Conference on Information Acquisition, P84

[4] 1/F NOISE IS NO SURFACE EFFECT [J].

HOOGE, FN .

PHYSICS LETTERS A, 1969, A 29 (03) :139-&

[5] Room-temperature ultraviolet nanowire nanolasers [J].

Huang, MH ;

Mao, S ;

Feick, H ;

Yan, HQ ;

Wu, YY ;

Kind, H ;

Weber, E ;

Russo, R ;

Yang, PD .

SCIENCE, 2001, 292 (5523) :1897-1899

[6]

Kim EK, 2007, J KOREAN PHYS SOC, V51, pS170

[7] Noise characteristics of single-walled carbon nanotube network transistors [J].

Kim, Un Jeong ;

Kim, Kang Hyun ;

Kim, KyuTae ;

Min, Yo-Sep ;

Park, Wanjun .

NANOTECHNOLOGY, 2008, 19 (28)

[8] The sensitivity of gas sensor based on single ZnO nanowire modulated by helium ion radiation [J].

Liao, L. ;

Lu, H. B. ;

Li, J. C. ;

Liu, C. ;

Fu, D. J. ;

Liu, Y. L. .

APPLIED PHYSICS LETTERS, 2007, 91 (17)

[9] Low-frequency noise in submicrometer MOSFETs with HfO2, HfO2/Al2O3 and HfAlOx gate stacks [J].

Min, BG ;

Devireddy, SP ;

Çelik-Butler, Z ;

Wang, F ;

Zlotnicka, A ;

Tseng, HH ;

Tobin, PJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (10) :1679-1687

[10] Fabrication and electrical characteristics of high-performance ZnO nanorod field-effect transistors [J].

Park, WI ;

Kim, JS ;

Yi, GC ;

Bae, MH ;

Lee, HJ .

APPLIED PHYSICS LETTERS, 2004, 85 (21) :5052-5054

← 1 2 →