Methylsiloxane spin-on-glass films for low dielectric constant interlayer dielectrics

被引：27

作者：

Yamada, N ^{[1
]}

Takahashi, T ^{[1
]}

机构：

[1] Nippon Steel Corp Ltd, Adv Technol Res Labs, Futtsu 2938511, Japan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2000年 / 147卷 / 04期

关键词：

D O I：

10.1149/1.1393381

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A new spin-on-glass (SOG) solution has been obtained by the hydrolysis of methyltriethoxysilane and dimethoxymethyl-3,3,3-trifluoropropylsilane. When the SOG Film is cured at 360 degrees C. it contains both trifluoropropyl and methyl groups and exhibits the dielectric constant of 3.0. Curing the SOG film at 450 degrees C in nitrogen decomposes only the trifluoropropyl group. The resultant film shows the Brunauer-Emmett-Teller surface area of 250 m(2)/g indicative of a porous structure. The thermal decomposition of the trifluoropropyl groups gives few silanol groups, showing hydrophobic property in spite of the porous structure. The dielectric constant of the film is reduced to 2.3 owing to the pores introduced into the methylsiloxane network. (C) 2000 The Electrochemical Society. S0013-4651(99)07-053-6. All rights reserved.

引用

页码：1477 / 1480

页数：4

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