Thermal rectification at water/functionalized silica interfaces

被引:80
作者
Hu, Ming [1 ,2 ]
Goicochea, Javier V. [2 ]
Michel, Bruno [2 ]
Poulikakos, Dimos [1 ]
机构
[1] ETH, Dept Mech & Proc Engn, Lab Thermodynam Emerging Technol, Inst Energy Technol, CH-8092 Zurich, Switzerland
[2] IBM Res GmbH, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland
关键词
HYDROGEN-BOND DYNAMICS; MOLECULAR-DYNAMICS; WATER; STATE; CONDUCTIVITY; ARCHITECTURE; SIMULATIONS; RESISTANCE; MONOLAYERS; TRANSPORT;
D O I
10.1063/1.3247882
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using nonequilibrium molecular dynamics simulations, we study the thermal diode effect in a system composed of silica, self-assembled monolayers (SAMs) at the silica surface and water surrounding this system, by imposing a series of positive and negative heat currents. We have found that in the limit of large heat currents, the thermal conductance at the SAMs-water interface is about 1000 MW/m(2) K at room temperature for heat flowing from the SAMs to the water and 650 MW/m(2) K for heat flowing from the water to the SAMs, respectively, resulting in a thermal rectification of up to 54%. Analysis of the radial distribution function of oxygen-oxygen atoms in water indicates that the origin of the thermal rectification resides in the strong temperature dependence of the hydrogen bonds in water. (C) 2009 American Institute of Physics. [doi:10.1063/1.3247882]
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页数:3
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