Erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well saturable absorber

被引：35

作者：

Lecourt, J. -B.

Martel, G.

Guezo, M.

Labbe, C.

Loualiche, S.

机构：

[1] Univ Rouen, CORIA, UMR 6614, Grp Opt & Optron, F-76801 St Etienne, France

[2] INSA Rennes, Lab Etud Nanostruct Semicond, F-35043 Rennes, France

来源：

OPTICS COMMUNICATIONS | 2006年 / 263卷 / 01期

关键词：

D O I：

10.1016/j.optcom.2006.01.009

中图分类号：

O43 [光学];

学科分类号：

070207 [光学]; 0803 [光学工程];

摘要：

We report on the behavior of an erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well semiconductor saturable absorber. The fiber is moderately doped in erbium ions. The saturable absorber consists of 40 periods of InGaAs (8.5 nm)/InP (10 nm) grown on an InP substrate. The laser efficiency is nonlinear under Q-switch regime and unusual temporal pulse shapes with rising times lower than decay times are observed around threshold. Pulse duration is around the microsecond range. Simple arguments based on a rate-equations approach are proposed in order to explain our results. They are justified a posteriori via numerical integration of the equations. The variation of threshold level versus spectroscopic parameters has been determined and that makes a guideline for generalizing our discussion. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：71 / 83

页数：13

共 46 条

[1]

ANTIPHASE DYNAMICS AND POLARIZATION EFFECTS IN THE ND-DOPED FIBER LASER [J].