High-indium-content InxGa1-xAs/GaAs quantum wells with emission wavelengths above 1.25 μm at room temperature

被引：26

作者：

Ni, HQ ^{[1
]}

Niu, ZC ^{[1
]}

Xu, XH ^{[1
]}

Xu, YQ ^{[1
]}

Zhang, W ^{[1
]}

Wei, X ^{[1
]}

Bian, LF ^{[1
]}

He, ZH ^{[1
]}

Han, Q ^{[1
]}

Wu, RH ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 25期

关键词：

D O I：

10.1063/1.1762985

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-indium-content InxGa1-xAs/GaAs single/multi-quantum well (SQW/MQW) structures have been systematically investigated. By optimizing the molecular-beam epitaxy growth conditions, the critical thickness of the strained In0.475Ga0.525As/GaAs QWs is raised to 7 nm, which is much higher than the value given by the Matthews and Blakeslee model. The good crystalline quality of the strained InGaAs/GaAs MQWs is proved by x-ray rocking curves. Photoluminescence measurements show that an emission wavelength of 1.25 mum at room temperatures with narrower full width at half maximum less than 30 meV can be obtained. The strain relaxation mechanism is discussed using the Matthews-Blakeslee model. (C) 2004 American Institute of Physics.

引用

页码：5100 / 5102

页数：3

共 26 条

[1] CRITICAL LAYER THICKNESS ON (111)B-ORIENTED INGAAS/GAAS HETEROEPITAXY [J].

ANAN, T ;

NISHI, K ;

SUGOU, S .

APPLIED PHYSICS LETTERS, 1992, 60 (25) :3159-3161

[2] VARIATION OF THE CRITICAL LAYER THICKNESS WITH IN CONTENT IN STRAINED INX GA1-XAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

ANDERSSON, TG ;

CHEN, ZG ;

KULAKOVSKII, VD ;

UDDIN, A ;

VALLIN, JT .

APPLIED PHYSICS LETTERS, 1987, 51 (10) :752-754

[3] DETERMINATION OF CRITICAL LAYER THICKNESS AND STRAIN TENSOR IN INXGA1-XAS GAAS QUANTUM-WELL STRUCTURES BY X-RAY-DIFFRACTION [J].

CHEN, YC ;

BHATTACHARYA, PK .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (11) :7389-7394

[4] Role of molecular beam epitaxy parameters on InGaAs surface roughness [J].

Deng, X ;

Liu, W ;

Lin, ME ;

Zhang, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (04) :1558-1561

[5] PLASTIC RELAXATION OF INGAAS GROWN ON GAAS [J].

DUNSTAN, DJ ;

KIDD, P ;

HOWARD, LK ;

DIXON, RH .

APPLIED PHYSICS LETTERS, 1991, 59 (26) :3390-3391

[6] LOW-TEMPERATURE GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

APPLIED PHYSICS LETTERS, 1991, 58 (20) :2276-2278

[7] LOW SUBSTRATE-TEMPERATURE MOLECULAR-BEAM EPITAXIAL-GROWTH AND THE CRITICAL LAYER THICKNESS OF INGAAS GROWN ON GAAS [J].

ELMAN, B ;

KOTELES, ES ;

MELMAN, P ;

OSTREICHER, K ;

SUNG, C .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (05) :2634-2640

[8] Temperature effects on the radiative recombination in self-assembled quantum dots [J].

Fafard, S ;

Raymond, S ;

Wang, G ;

Leon, R ;

Leonard, D ;

Charbonneau, S ;

Merz, JL ;

Petroff, PM ;

Bowers, JE .

SURFACE SCIENCE, 1996, 361 (1-3) :778-782

[9] IS LOW-TEMPERATURE GROWTH THE SOLUTION TO ABRUPT SI/SI1-XGEX INTERFACE FORMATION [J].

FUKATSU, S ;

USAMI, N ;

FUJITA, K ;

YAGUCHI, H ;

SHIRAKI, Y ;

ITO, R .

JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) :401-405

[10] PROPERTIES OF INXGA1-XAS-GAAS STRAINED-LAYER QUANTUM-WELL-HETEROSTRUCTURE INJECTION-LASERS [J].

LAIDIG, WD ;

LIN, YF ;

CALDWELL, PJ .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (01) :33-38

← 1 2 3 →