DETERMINATION OF CRITICAL LAYER THICKNESS AND STRAIN TENSOR IN INXGA1-XAS GAAS QUANTUM-WELL STRUCTURES BY X-RAY-DIFFRACTION

被引：36

作者：

CHEN, YC

BHATTACHARYA, PK

机构：

[1] Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 11期

关键词：

D O I：

10.1063/1.354030

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used the double-crystal x-ray rocking curve technique to determine lattice constant, strain relaxation, thickness, and critical thickness of a thin InxGa1-xAs layer embedded in GaAs. In this work we have measured and analyzed x-ray data over a wide scan angle (approximately 2.0-degrees). This allows the simultaneous determination of buried layer thickness and strain. The measurement results were analyzed by the dynamical diffraction theory. The critical thickness for an InGaAs layer embedded in GaAs obtained from x-ray data is shown to be larger than that predicted by the force balance model. The strain tensors as a function of layer thickness are also analyzed for the buried InxGa1-xAs of different x values.

引用

页码：7389 / 7394

页数：6

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