X-RAY INTERFEROMETRY AND ITS APPLICATION TO DETERMINATION OF LAYER THICKNESS AND STRAIN IN QUANTUM-WELL STRUCTURES

被引：31

作者：

HOLLOWAY, H

机构：

[1] Ford Motor Company, Research Staff S3028, Dearborn, MI 48121-2053

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 10期

关键词：

D O I：

10.1063/1.345189

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An analysis is made of x-ray interference that occurs at the Bragg condition when two epitaxially related regions of the same material are separated by a thin layer of a different material. With optimal conditions, the effects of the separator layer are shown to be detectable at thicknesses down to one or two unit cells (6-12 Å), and its thickness may be measured with a precision of about 0.02 Å. Application of these results to the determination of misfit-induced strain is discussed with particular reference to thin layers of Ga0.8In0.2As enclosed by GaAs.

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页码：6229 / 6236

页数：8

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