ANISOTROPIC AND INHOMOGENEOUS STRAIN RELAXATION IN PSEUDOMORPHIC IN0.23GA0.77AS/GAAS QUANTUM WELLS

被引：59

作者：

GRUNDMANN, M ^{[1
]}

LIENERT, U ^{[1
]}

BIMBERG, D ^{[1
]}

FISCHERCOLBRIE, A ^{[1
]}

MILLER, JN ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 17期

关键词：

D O I：

10.1063/1.102212

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1765 / 1767

页数：3

共 23 条

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[8] DISLOCATION-STRUCTURE, FORMATION, AND MINORITY-CARRIER RECOMBINATION IN ALGAAS/INGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
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[10] GANDHI SK, 1988, APPL PHYS LETT, V53, P1204

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