IS LOW-TEMPERATURE GROWTH THE SOLUTION TO ABRUPT SI/SI1-XGEX INTERFACE FORMATION

被引：18

作者：

FUKATSU, S ^{[1
]}

USAMI, N ^{[1
]}

FUJITA, K ^{[1
]}

YAGUCHI, H ^{[1
]}

SHIRAKI, Y ^{[1
]}

ITO, R ^{[1
]}

机构：

[1] UNIV TOKYO,FAC ENGN,DEPT APPL PHYS,BUNKYO KU,TOKYO 113,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90648-G

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Si/Si1-xGex interface transients were investigated with respect to the abruptness and smoothness by using sputter depth profiling (SIMS), X-ray photoemissions (XPS), photoluminescence and transmission electron microscopy. Ge segregation was confirmed by blue-shift of luminescence energy above what is expected in a square well potential, along with SIMS measurement. Ge segregation was found to persist even at 300-degrees-C or lower. In contrast, Ge segregation was quenched by either segregant-assisted growth using Sb and Ga or solid-phase regrowth of Si cap layer; thereby a sharp Si/Si1-xGex interface was obtained. However, low-temperature-grown samples required an extensive anneal to restore band-edge luminescence, indicating a lack of quality of crystallinity.

引用

页码：401 / 405

页数：5

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