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Non-classical photon emission from a single InAs/InP quantum dot in the 1.3-μm optical-fiber band

被引：76
作者：
Takemoto, K
Sakuma, Y
Hirose, S
Usuki, T
Yokoyama, N
Miyazawa, T
Takatsu, M
Arakawa, Y
机构：
[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan
[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
[3] Univ Tokyo, Inst Ind Sci, Tokyo 1538505, Japan
[4] Univ Tokyo, Nanoelect Collaborat Res Ctr, Tokyo 1538505, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 7B期
关键词：
InAs/InP; single quantum dots; photon antibunching; single photon emission; O-band;
D O I：
10.1143/JJAP.43.L993
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the first observation of single-photon emission from a single InAs/InP quantum dot at a telecommunication wavelength. The single quantum dot was developed through a 'double-cap' growth method using metalorganic chemical vapor deposition, and its emission covers a wide spectral range of the optical telecommunication band. Using a pulsed excitation source and gated single-photon detection modules, we observed a,photon antibunching behavior through a single-mode optical fiber for an isolated exciton emission line. at 1277.1 nm in the O-band (1.3 mum).
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收藏
页码：L993 / L995
页数：3
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