Observation of Landau levels at the InAs(110) surface by scanning tunneling spectroscopy

被引：56

作者：

Wildoer, JWG ^{[1
]}

Harmans, CJPM ^{[1
]}

vanKempen, H ^{[1
]}

机构：

[1] DELFT UNIV TECHNOL,DEPT APPL PHYS,NL-2600 GA DELFT,NETHERLANDS

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.55.R16013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low-temperature scanning tunneling spectroscopy measurements on clean InAs(110) surfaces demonstrate the possibility to investigate Landau quantization with subnanometer resolution. Separate Landau levels are resolved at magnetic fields of 2 T and larger. Experiments with different tips show a significant tip dependence. In zero field resonances are observed near the onset of the conduction band, which are attributed to tip-induced band bending. Although Landau quantization is only present parallel to the sample surface, the Landau levels give a large contribution to the total tunnel current.

引用

页码：16013 / 16016

页数：4

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