Electronic structure of the 6H-SiC(0001)-3 x 3 surface studied with angle-resolved inverse and direct photoemission

被引：39

作者：

Johansson, LSO ^{[1
]}

Duda, L ^{[1
]}

Laurenzis, M ^{[1
]}

Krieftewirth, M ^{[1
]}

Reihl, B ^{[1
]}

机构：

[1] Univ Dortmund, D-44221 Dortmund, Germany

来源：

SURFACE SCIENCE | 2000年 / 445卷 / 01期

关键词：

angle resolved photoemission; inverse photoemission spectroscopy; low index single crystal surfaces; silicon carbide; surface electronic phenomena (work function; surface potential; surface states; etc.);

D O I：

10.1016/S0039-6028(99)01054-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated the 3 x 3 reconstruction of the 6H-SiC(0001) surface with angle-resolved direct and inverse photoemission (ARUPS and IPES). The surface was prepared by heating the sample in a Si flux and showed an excellent 3 x 3 LEED pattern. In the ARUPS spectra, three occupied surface states were found at the energies 0.5 eV, 1.5 eV and 1.9 eV below E-F. In the IPES spectra, an unoccupied dispersionless surface state was observed at 0.5 eV above E-F. Thereby, the reconstruction has a semiconducting character with a surface bandgap of 1.0 eV. This result agrees well with recent theoretical results that predict strong electron-correlation effects, leading to a Mott-Hubbard ground state. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：109 / 114

页数：6

共 19 条

[1]

BADZIAG P, 1985, SURF SCI, V162, P1

[2] ADSORPTION AND COADSORPTION OF BORON AND OXYGEN ON ORDERED ALPHA-SIC SURFACES [J].