Transistor-based evaluation of conduction-band offset in GaInP/GaAs heterojunction

被引：11

作者：

Faleh, MS

Tasselli, J

Bailbe, JP

Marty, A

机构：

[1] Lab. d'Anal. d'Arch. Syst. C.N.R.S., 31077 Toulouse Cedex, 7, Avenue du Colonel Roche

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 09期

关键词：

D O I：

10.1063/1.117394

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The conduction-band discontinuity for GaInP/GaAs metalorganic chemical vapor deposition (MOCVD) HBTs has been determined from current-voltage characterization. The charge-control model used permits to compare the respective weights of collector current limitations due to the potential barrier effect and to the carrier diffusion mechanism in the law gap base region. A study of sensitivity to the main sources of error leads to a conduction-band offset value of Delta E(C) approximate to 170 +/- 16 meV confirming the advantage of the resulting band lineup for the HBT. (C) 1996 American Institute of Physics.

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页码：1288 / 1290

页数：3

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