Application of high energy ion beams for local lifetime control in silicon

Low-dose energy-dispersed irradiation of silicon power diodes by He-4(2+) ions in the energy range of 4-15 MeV was used to create a deep damage region which locally changes the carrier lifetime. Properties and profiles of vacancy-related defects were studied by DLTS and C-V measurement. Substantial improvements of the diode dynamic parameters were achieved and the advantages of the novel technique, multiple energy-dispersed irradiation, are also shown.