Nitrogen-doping effects on electrical properties of hydrogenated microcrystalline silicon as studied by electron paramagnetic resonance and conductivity

被引:4
作者
Ehara, T
Amino, T
Shinomiya, H
Ikoma, T
Akiyama, K
Tero-Kubota, S
机构
[1] Ishinomaki Senshu Univ, Sch Sci & Engn, Ishinomaki, Miyagi 9868580, Japan
[2] Tohoku Univ, Inst Chem React Sci, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 01期
关键词
electron paramagnetic resonance; microcrystalline silicon; nitrogen; doping; conduction electron; dangling bond;
D O I
10.1143/JJAP.39.31
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have examined Raman scattering, X-ray diffraction, electron paramagnetic resonance (EPR) spectra and the conductivity of nitrogen-doped hydrogenated microcrystalline silicon. The EPR signals due to conduction electrons have been observed in the doped films, except for highly doped samples that have no microcrystalline fraction. The result indicates that the doped nitrogen atom acts as an electron donor in the microcrystalline silicon. The temperature dependence of the conductivity clarify that the activation energy depends on the doping level. The influence of the doping level on the conductivity can be interpreted in terms:of the balance of the effective electron donation and the decrease of carrier mobility due to a decrease of the microcrystalline phase volume ratio. At temperatures lower than approximately 180 K, the conductivity shows little variation. This is explained using a model of the hopping conduction, in terms of defect states for all samples.
引用
收藏
页码:31 / 34
页数:4
相关论文
共 17 条
[1]   Electron spin resonance study of nitrogen-doped microcrystalline silicon and amorphous silicon [J].
Ehara, T .
APPLIED SURFACE SCIENCE, 1997, 113 :126-129
[2]   The crystalline properties of nitrogen doped hydrogenated microcrystalline silicon thin films [J].
Ehara, T .
THIN SOLID FILMS, 1997, 310 (1-2) :322-326
[3]   FREE-ELECTRONS AND DEFECTS IN MICROCRYSTALLINE SILICON STUDIED BY ELECTRON-SPIN-RESONANCE [J].
FINGER, F ;
MALTEN, C ;
HAPKE, P ;
CARIUS, R ;
FLUCKIGER, R ;
WAGNER, H .
PHILOSOPHICAL MAGAZINE LETTERS, 1994, 70 (04) :247-254
[4]   ROLE OF HYDROGEN DILUTION AND DIBORANE DOPING ON THE GROWTH-MECHANISM OF P-TYPE MICROCRYSTALLINE SILICON FILMS PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITION [J].
GHOSH, S ;
DE, A ;
RAY, S ;
BARUA, AK .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (10) :5205-5211
[5]   CHARACTERIZATION OF MICROCRYSTALLINITY IN HYDROGENATED SILICON THIN-FILMS [J].
GODET, C ;
MARCHON, B ;
SCHMIDT, MP .
THIN SOLID FILMS, 1987, 155 (02) :227-242
[6]  
GREBNER S, 1993, MAT RES S C, V283, P513
[7]   ELECTRON-SPIN-RESONANCE AND ELECTRICAL-PROPERTIES OF P-DOPED MICROCRYSTALLINE SI [J].
HASEGAWA, S ;
NARIKAWA, S ;
KURATA, Y .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 48 (05) :431-447
[8]   STRUCTURE CHANGE OF MICROCRYSTALLINE SILICON FILMS IN DEPOSITION PROCESS [J].
IMURA, T ;
KAYA, H ;
TERAUCHI, H ;
KIYONO, H ;
HIRAKI, A ;
ICHIHARA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (02) :179-183
[9]   RAMAN-SCATTERING FROM SMALL PARTICLE-SIZE POLYCRYSTALLINE SILICON [J].
IQBAL, Z ;
VEPREK, S ;
WEBB, AP ;
CAPEZZUTO, P .
SOLID STATE COMMUNICATIONS, 1981, 37 (12) :993-996
[10]   RAMAN-SCATTERING FROM HYDROGENATED MICROCRYSTALLINE AND AMORPHOUS-SILICON [J].
IQBAL, Z ;
VEPREK, S .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (02) :377-392