Chemical solution growth of ferroelectric oxide thin films and nanostructures

被引:88
作者
Bassiri-Gharb, Nazanin [1 ,2 ]
Bastani, Yaser [1 ]
Bernal, Ashley [3 ]
机构
[1] Georgia Inst Technol, GW Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
[2] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
[3] Rose Hulman Inst Technol, Terre Haute, IN 47803 USA
基金
美国国家科学基金会;
关键词
SOLUTION DEPOSITION; DIELECTRIC-PROPERTIES; PIEZOELECTRIC MEMS; LOW-TEMPERATURE; PZT; FABRICATION; CRYSTALLIZATION; CAPACITORS; PRESSURE; BEHAVIOR;
D O I
10.1039/c3cs60250h
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Chemical solution deposition (CSD) provides a low-cost, versatile approach for processing of thin and ultrathin ferroelectric films, as well as short and high aspect ratio ferroelectric nanostructures. This review discusses the state of the art in the processing of ferroelectric oxide thin films and nanostructures by CSD, with special emphasis on nucleation and growth phenomena. The effects of choice of precursor solution, substrate and bottom electrode stack, and thermal treatment conditions on the nucleation and growth are examined. Furthermore, methods to control ferroelectric thin film's microstructure, including phase content, texture, grain size and chemical homogeneity, are reviewed. Lastly, current CSD-based methods for processing of ferroelectric oxide nanostructures are presented with special consideration of the structural development, as well as advantages and shortcomings associated with each method. Lead zirconate-titanate, Pb(ZrxTi1-x) O-3 (PZT), and barium titanate, BaTiO3 (BT), are used throughout the discussion, as specific examples for CSD processing of perovskite ferroelectrics.
引用
收藏
页码:2125 / 2140
页数:16
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