Reduction of current leakage in chemical-vapor deposited Ta2O5 thin-films by oxygen-radical annealing

被引：30

作者：

Matsui, Y ^{[1
]}

Torii, K ^{[1
]}

Hirayama, M ^{[1
]}

Fujisaki, Y ^{[1
]}

Iijima, S ^{[1
]}

Ohji, Y ^{[1
]}

机构：

[1] HITACHI LTD,SEMICOND & INTEGRATED CIRCUITS DIV,KOKUBUNJI,TOKYO 185,JAPAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 09期

关键词：

D O I：

10.1109/55.536283

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical properties of CVD-Ta2O5 thin-films are improved by post-deposition oxygen-radical annealing. Since this annealing is carried out at very low pressure (10(-6) torr), the growth of SiO2 in Ta2O5/Si interface is small, and the residual carbon in the film is reduced, The damage to the Ta2O5 film caused by oxygen ion bombardment is negligible, because few charged particles reach the film, A critical voltage V-crit of 1.45 V for the leakage current less than 10(-8) A/cm(2) was realized by these Ta2O5 films with the effective thickness t(eff) of 2.59 nm, The V-crit value for oxygen-radical annealing is higher than that for oxygen-plasma annealing.

引用

页码：431 / 433

页数：3

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