Correlation between lifetime and blocking temperature distribution in spin-valve structures

被引：14

作者：

Nozières, JP ^{[1
]}

Jaren, S ^{[1
]}

Zhang, YB ^{[1
]}

Pentek, K ^{[1
]}

Zeltser, A ^{[1
]}

Wills, P ^{[1
]}

Speriosu, VS ^{[1
]}

机构：

[1] Appl Magnet Corp, Goleta, CA 93117 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 09期

关键词：

D O I：

10.1063/1.372786

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The blocking temperature distribution T-b(T) and the failure activation energy (as defined by a 10% drop in the magnetoresistance amplitude in a reverse field equivalent to the self-demagnetizing field of a micron size stripe height device) have been determined in spin-valve sheet films with FeMn, IrMn, PtMn, NiMn, and CrPdMn antiferromagnetic exchange biasing layers. We find a clear correlation between the expected lifetime and the fraction of loose (e.g., unblocked) antiferromagnetic grains, which we believe is due to pinned layer rotation being the main failure mechanism in these systems. For CrPdMn structures, a good agreement is found between the stability of sheet films and of finished sliders. From these data, only NiMn and PtMn appear to be suitable for disk-drive applications. (C) 2000 American Institute of Physics. [S0021-8979(00)87008-5].

引用

页码：6609 / 6611

页数：3

共 13 条

[1] The distribution of blocking temperature in NiFe-RuxRhyMn bilayers [J].