Local structure of ion-bombarded alpha-SiC analyzed by EXAFS

X-ray absorption spectroscopy on the Si k-edge was performed on alpha-SiC (6H) to monitor the evolution of the local structure around the Si atoms after ion bombardment. The samples were irradiated by 50 keV Na ions at fluences of 10(13) - 10(16) ions/cm(2) at 8 temperature of 80 K. EXAFS analysis clearly reveals that the hetero-atomic short range order of the crystalline matrix is almost completely conserved over the crystalline-to-amorphous transition as indicated by RBS-C. Further irradiation at higher fluences results in a change of the atomic coordination and formation of homonuclear Si-Si bonds.